Frequency Domain Comparison of GaSe Thin Film and Bulk Single Crystal

Abstract

Frequency domain measurements in the frequency range 10-2 to 104 Hz and temperature range 300 to 400K have been carried out for p-type -GaSe single crystal and GaSe thin films. Activation energies for p-type -GaSe single crystal and GaSe thin film have been determined from the lateral shift in frequency vs 1/T plots. The obtained values for single crystal are 0.75  0.03 eV for both ‖ c and c for Au contacts, and for thin films 0.66 ± 0.03eV for Al tape contacts, 0.72 ± 0.03eV for Cu tape contacts, and 0.65 ± 0.03eV for Cu evaporated contacts.